27-33ghz_tripler.pdf

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27 - 33 GHz GaAs Tripler MMIC
Preliminary Data Sheet
Monolithic Microwave Integrated Circuit (MMIC)
Frequency Tripler (coplanar design)
Input/Output matched to 50
Input frequency range: 9 GHz to 11 GHz
Output frequency range: 27 GHz to 33 GHz
Chip size: 2.25 mm
×
2.0 mm
27 - 33 GHz Tripler
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Description
This GaAs MMIC frequency tripler is intended for use in radio link applications. The
device is fabricated with a 0.13 micron Pseudomorphic InGaAs/AlGaAs/GaAs High
Electron Mobility Transistor processing technology.
Type
27 - 33 GHz Tripler
Marking
Ordering Code
on request
Package
Chip
Electrical Specifications
(
V
DS
= 3 V)
Parameter
min.
Input frequency range
f
0
Gain
Input power
Output power at
f
0
9
10
–1
Limit Values
typ.
– 12
< – 15
– 0.75
40
max.
11
15
0
GHz
dB
dBm
dBm
V
mA
Unit
Test Conditions
V
GS
I
DS
@ 14 dBm input power
Data Sheet
1
2001-01-01
GaAs Components
27 - 33 GHz Tripler
Measured Data
(on chip measurements)
f
0
= 9.933 GHz,
V
GS
= – 0.75 V,
V
DS
= 3 V
15
dBm
10
Output Power
EHT09223
10
dB
5
0
Gain
5
f
0
-5
-10
f
-15
-20
-5
f
0
5
10
Input Power
15
-5
-10
-15
-20
-25
dBm 25
Technology Data
Parameter
Chip thickness
Chip size
DC/RF Bond pads
Bond pad material
Chip passivation
Value
95
µ
m
2.25 mm
×
2.0 mm
100
µ
m
×
100
µ
m/70
µ
m
×
70
µ
m
Au (plated gold)
SiN (silicon nitride)
Data Sheet
2
2001-01-01
GaAs Components
27 - 33 GHz Tripler
Recommendation of Bonding Conditions
Parameter
Table Temp.
Tool Temp.
Scrub
Bond Force
Wire Diameter
Thermocompression
Nailhead, without Ultrasonic
250
°
C
180
°
C
100 Hz
50 g
25
µ
m
Wedge
Bonding
250
°
C
150
°
C
25 g
17
µ
m
Bond Pull Test
Mil 883, > 2 g
1 : 2.5 g
2 : 3.1 g
3 : 3.2 g
4 : 3.0 g
5 : 2.8 g
V
G
V
D
Coplanar GND
RF IN
Coplanar GND
Coplanar GND
RF OUT
x3
Coplanar GND
EHT09224
Figure 1
Bond Plan
Capacitors with approximately 100 pF should be used to block the
V
G
and
V
D
bias pads
to ground.
Data Sheet
3
2001-01-01
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