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BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor
August 1992
BS170 MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode field effect transistors
are produced using National’s very high cell density third
generation DMOS technology These products have been
designed to minimize on-state resistance provide rugged
and reliable performance and fast switching They can be
used with a minimum of effort in most applications requir-
ing up to 500 mA DC This product is particularly suited to
low voltage low current applications such as small servo
motor controls power MOSFET gate drivers and other
switching applications
Features
Y
Y
Y
Y
Y
Efficient high density cell design approaching
(3 million in
2
)
Voltage controlled small signal switch
Rugged
High saturation current
Low R
DS(on)
TL G 11379 –1
TL G 11379 – 2
TO-92
BS170
TO-236AB
(SOT-23)
MMBF170
TL G 11379 – 3
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
GS
s
1 MX)
Gate-Source Voltage
Drain Current
Continuous
Pulsed
500
BS170
60
60
g
20
MMBF170
Units
V
V
V
500
800
mA
mA
mW
mW C
C
C
P
D
Total Power Dissipation
Derate above 25 C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
from Case for 10 Seconds
Purposes
830
66
b
55 to 150
300
24
T
J
T
STG
T
L
300
C
1995 National Semiconductor Corporation
TL G 11379
RRD-B30M115 Printed in U S A
BS170
Electrical Characteristics
(T
C
e
25 C unless otherwise noted)
Symbol
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
V
GS
e
0V I
D
e
100
mA
V
DS
e
25V V
GS
e
0V
V
GS
e
15V V
DS
e
0V
60
05
10
V
mA
nA
Parameter
Conditions
Min
Typ
Max
Units
ON CHARACTERISTICS
(Note 1)
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
e
V
GS
I
D
e
1 mA
V
GS
e
10V I
D
e
200 mA
V
DS
e
10V I
D
e
200 mA
08
21
12
320
3
5
V
X
mS
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
e
10V V
GS
e
0V
f
e
1 0 MHz
24
17
7
40
30
10
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
on
t
off
Turn-On Time
Turn-Off Time
V
DD
e
25V I
D
e
200 mA V
GS
e
10V
R
G
e
25X
10
10
ns
ns
THERMAL CHARACTERISTICS
R
iJA
Thermal Resistance Junction to Ambient
150
C W
MMBF170
Electrical Characteristics
(T
C
e
25 C unless otherwise noted)
Symbol
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
V
GS
e
0V I
D
e
100
mA
V
DS
e
25V V
GS
e
0V
V
GS
e
15V V
DS
e
0V
60
05
10
V
mA
nA
Parameter
Conditions
Min
Typ
Max
Units
ON CHARACTERISTICS
(Note 1)
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
e
V
GS
I
D
e
1 0 mA
V
GS
e
10V I
D
e
200 mA
V
DS
t
2 V
DS(on)
I
D
e
200 mA
08
21
12
320
3
5
V
X
mS
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
e
10V V
GS
e
0V f
e
1 0 MHz
24
17
7
40
30
10
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
t
on
t
off
Turn-On Time
Turn-Off Time
V
DD
e
25V I
D
e
500 mA V
GS
e
10V
R
G
e
50X
10
10
ns
ns
THERMAL CHARACTERISTICS
R
iJA
Thermal Resistance Junction to Ambient
417
C W
Note 1
Pulse Test Pulse Width
s
300
ms
Duty Cycle
s
2 0%
2
Typical Electrical Characteristics
BS170 MMBF170
TL G 11379 – 6
TL G 11379 – 7
FIGURE 1 On-Region Characteristics
FIGURE 2 R
DS(on)
Variation
with Drain Current and Gate Voltage
TL G 11379 – 8
TL G 11379 – 9
FIGURE 3 Transfer Characteristics
FIGURE 4 Breakdown Voltage
Variation with Temperature
TL G 11379 – 10
TL G 11379 – 11
FIGURE 5 Gate Threshold Variation with Temperature
FIGURE 6 On-Resistance Variation with Temperature
3
Typical Electrical Characteristics
(Continued)
BS170 MMBF170
TL G 11379 – 12
TL G 11379 – 13
FIGURE 7 On-Resistance vs Drain Current
FIGURE 8 Body Diode Forward Voltage
Variation with Current and Temperature
TL G 11379 – 14
TL G 11379 – 15
FIGURE 9 Capacitance vs Drain-Source Voltage
FIGURE 10 BS170 Safe Operating Area
TL G 11379 – 16
FIGURE 11 MMBF170 Safe Operating Area
4
Typical Electrical Characteristics
(Continued)
BS170 MMBF170
TL G 11379 – 17
FIGURE 12 TO-92 Transient Thermal Response
TL G 11379 – 18
FIGURE 13 SOT-23 Transient Thermal Response
Physical Dimensions
inches (millimeters)
TL G 11379 – 4
Note
All 1 transistors are load formed to this configuration prior to bulk shipment
TO-92
TO-18 Lead Form STD
5

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