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MUR840, MUR860, RURP840, RURP860
Data Sheet
November 2013
8 A, 400 V - 600 V, Ultrafast Diodes
Features
• Ultrafast Recovery
t
rr
= 70 ns (@ I
F
= 8 A)
• Max Forward Voltage, V
F
= 1.5 V (@ T
C
= 25°C)
•
400 V,
600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Description
The MUR840, MUR860, RURP840, RURP860
is an
ultrafast diode with low forward voltage drop. This device is
intended for use as freewheeling and clamping diodes in a
variety of switching power supplies and other power
switching applications. It is specially suited for use in
switching power supplies and industrial application.
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
MUR840
RURP840
MUR860
RURP860
PACKAGE
TO-220AC-2L
TO-220AC-2L
TO-220AC-2L
TO-220AC-2L
BRAND
MUR840
RURP840
MUR860
RURP860
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
MUR840
RURP840
MUR860
RURP860
600
600
600
8
16
100
75
20
-65 to 175
300
260
UNIT
V
V
V
A
A
A
W
mJ
o
C
o
C
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 155
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Maximum Lead Temperature for Soldering
Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
400
400
400
8
16
100
75
20
-65 to 175
300
260
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
RURP840, RURP860
Rev.
C1
1
www.fairchildsemi.com
MUR840, MUR860, RURP840, RURP860
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
MUR840, RURP840
SYMBOL
V
F
TEST CONDITION
I
F
= 8 A
I
F
= 8 A, T
C
= 150
o
C
I
R
V
R
= 400 V
V
R
= 600 V
V
R
= 400 V, T
C
= 150
o
C
V
R
= 600 V, T
C
= 150
o
C
t
rr
I
F
= 1 A, dI
F
/dt = 200 A/µs
I
F
= 8 A, dI
F
/dt = 200 A/µs
t
a
t
b
Q
rr
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µs,
D = 2%).
I
R
= Instantaneous reverse current.
T
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
rr
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
I
F
= 8 A, dI
F
/dt = 200 A/µs
I
F
= 8 A, dI
F
/dt = 200 A/µs
I
F
= 8 A, dI
F
/dt = 200 A/µs
V
R
= 10 V, I
F
= 0 A
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
32
21
195
25
-
MAX
1.3
1.0
100
-
500
-
60
70
-
-
-
-
2
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
MUR860, RURP860
TYP
-
-
-
-
-
-
-
-
32
21
195
25
-
MAX
1.5
1.2
-
100
-
500
60
70
-
-
-
-
2
UNIT
V
V
µA
µA
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
40
500
I
R
, REVERSE CURRENT (µA)
100
175
o
C
100
o
C
I
F
, FORWARD CURRENT (A)
10
10
100
o
C
175
o
C
1
0.5
0
25
o
C
0.5
1
1.5
2
2.5
1
0.1
25
o
C
0.01
0
100
200
300
400
500
600
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
RURP840, RURP860
Rev.
C1
2
www.fairchildsemi.com
MUR840, MUR860, RURP840, RURP860
Typical Performance Curves
60
T
C
= 25
o
C, dI
F
/dt = 200A/µs
50
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
40
80
(Continued)
100
T
C
= 100
o
C, dI
F
/dt = 200A/µs
t
rr
60
t
rr
30
20
10
0
0.5
t
a
t
b
40
t
a
t
b
20
1
I
F
, FORWARD CURRENT (A)
4
8
0
0.5
1
I
F
, FORWARD CURRENT (A)
4
8
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
125
T
C
= 175
o
C, dI
F
/dt = 200A/µs
t, RECOVERY TIMES (ns)
100
8
DC
6
SQ. WAVE
4
t
rr
75
50
t
a
t
b
2
25
0
0.5
0
140
145
150
155
160
165
170
175
1
I
F
, FORWARD CURRENT (A)
4
8
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
100
C
J
, JUNCTION CAPACITANCE (pF)
80
60
40
20
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
RURP840, RURP860
Rev.
C1
3
www.fairchildsemi.com
MUR840, MUR860, RURP840, RURP860
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I = 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
RURP840, RURP860
Rev.
C1
4
www.fairchildsemi.com
MUR840, MUR860, RURP840, RURP860
—
Ultrafast Diode
Mechanical Dimensions
Figure
12.
TO-220 2L - TO-220, MOLDED, 2LD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-002.
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
RURP840, RURP860 Rev. C1
4
www.fairchildsemi.com

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